Deformation potentials and electron-phonon coupling in silicon nanowires.

نویسندگان

  • F Murphy-Armando
  • G Fagas
  • J C Greer
چکیده

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, an effect that cannot be predicted without the form we find for Si nanowire deformation potentials.

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عنوان ژورنال:
  • Nano letters

دوره 10 3  شماره 

صفحات  -

تاریخ انتشار 2010